Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths-Reference-Cited by-同舟云学术

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Published:2019-09-25 Issue:11 Volume:100 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mrowiński Paweł,Musiał Anna^ORCID,Gawarecki Krzysztof,Dusanowski Łukasz,Heuser Tobias,Srocka Nicole,Quandt David,Strittmatter André,Rodt Sven,Reitzenstein Stephan,Sęk Grzegorz

Funder

Narodowe Centrum Badań i Rozwoju

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.115310/fulltext

Reference60 articles.

1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

2. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

3. Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition

4. The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bi-Exciton in prolate ellipsoidal quantum dot: Optical-Magnetic properties;Computational and Theoretical Chemistry;2024-09

2. Xenon-plasma focused ion beam processing of photonic microstructures with GaAs-based quantum dots;Optical Materials Express;2023-09-19

3. Structural properties of graded In_xGa 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands;Materials for Quantum Technology;2023-08-14

4. Nanowire-based integrated photonics for quantum information and quantum sensing;Nanophotonics;2023-01-23

5. Efficient Emission in the Telecom Range from Quantum Dots Embedded in Photonic Structures Fabricated by Focused Ion Beam Milling;Acta Physica Polonica A;2022-11