Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124963
Reference11 articles.
1. Wafer Fusion for Surface-Normal Optoelectronic Device Applications
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
4. Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector
5. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
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3. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
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