Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121920
Reference11 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection
3. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
4. Room temperature lasing from InGaAs quantum dots
5. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
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