Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/abd70a/pdf
Reference76 articles.
1. 3.9 W CW power from sub-monolayer quantum dot diode laser
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3. Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth
4. High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots
5. High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells
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1. Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures;Journal of Crystal Growth;2022-09
2. Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots;Nanotechnology;2022-07-25
3. Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures;AIP Advances;2021-07-01
4. Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition;Applied Physics Letters;2021-05-03
5. Submonolayer stacking growth of In(Ga)As nanostructures for optoelectronic applications: an alternative for Stranski–Krastanov growth;Japanese Journal of Applied Physics;2021-04-01
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