0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots-Reference-Cited by-同舟云学术

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Published:2000-10-20 Issue:11 Volume:15 Page:1061-1064
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mikhrin S S,Zhukov A E,Kovsh A R,Maleev N A,Ustinov V M,Shernyakov Yu M,Soshnikov I P,Livshits D A,Tarasov I S,Bedarev D A,Volovik B V,Maximov M V,Tsatsul'nikov A F,Ledentsov N N,Kop'ev P S,Bimberg D,Alferov Zh I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers

2. 9.3 W CW (In)AlGaAs 100 [micro sign]m wide lasers at 970 nm

3. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

4. 1 Tbit/s (10 × 10.7 Gbit/s) transoceanic transmission using 30 nm wide broadband optical repeaters with Aeff-enlarged positive dispersion fibre and slope-compensating DCF

5. Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

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