High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells-Reference-Cited by-同舟云学术

High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells

Published:2003-05 Issue:5-8 Volume:34 Page:491-493
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kovsh A.R,Zhukov A.E,Maleev N.A,Mikhrin S.S,Livshits D.A,Shernyakov Y.M,Maximov M.V,Pihtin N.A,Tarasov I.S,Ustinov V.M,Alferov Zh.I,Wang J.S,Wei L,Lin G,Chi J.Y,Ledentsov N.N,Bimberg D

Publisher

Elsevier BV

Subject

General Engineering

Reference5 articles.

1. Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

2. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition

3. 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

4. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

5. Gain in injection lasers based on self-organized quantum dots

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4. Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition;physica status solidi (b);2020-12-15

5. Optical and Spectral Characterization of Sub-monolayer QDIPs;Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures;2017-08-05