Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.2542/fulltext
Reference17 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100)
3. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
4. Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots
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