Sensitivity Analysis of Gallium Nitride Quantum Dot LED

Abstract

The main objective of this research is to present the impact of several doping and geometrical parameters on the performance of the GaN/AlGaN quantum dot-based light-emitting diode by employing numerical 3D simulations. The sensitivity coefficients of the parameters have been utilised to rank them. Four significant performance parameters were used in this research, such as, responsivity optical gain, internal quantum efficiency, and input power. The quantum dot’s bottom radius is observed to be the most relevant geometrical parameter for optical gain and internal quantum efficiency. Furthermore, the nanocolumn radius is the most important parameter for quantum dot responsivity and input power. The Nanocolumn radius is found to be the most critical parameter, based on the overall ranking.