Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect-Reference-Cited by-同舟云学术

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Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect

Published:2009-06-30 Issue:6 Volume:39 Page:501-504
ISSN:1063-7818
Container-title:Quantum Electronics
language:
Short-container-title:Quantum Electron.

Author:

Eliseev P G,Ukhanov A,Shtints A,Malloy K J

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1063-7818/39/i=6/a=A03/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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