Author:
Okumura Shigekazu,Fujisawa Kazuki,Naruke Tamami,Nishi Kenichi,Onishi Yutaka,Takemasa Keizo,Sugawara Mitsuru,Sugiyama Masakazu
Abstract
Abstract
The effect of low-temperature InGaAs/GaAs cover layer growth of InAs quantum dots on their optical and structural properties was investigated. Photoluminescence intensity depended heavily on the growth temperature and thickness of the low-temperature cover layer and decreased as the number of dislocations formed directly above InAs quantum dots increased. These dislocations are formed at the initial stage of high-temperature GaAs growth, originating from pits that remain on the surface after the growth of the low-temperature cover layer and subsequent annealing. To ensure a high-quality InAs quantum dot structure free from dislocations, it is important to obtain a highly flat surface with suppressed pits after low-temperature cover layer growth and subsequent annealing.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
2 articles.
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