Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties

Author:

Okumura Shigekazu,Fujisawa Kazuki,Yamaguchi Masaomi,Naruke Tamami,Nishi Kenichi,Takemasa Keizo,Sugawara Mitsuru,Sugiyama Masakazu

Abstract

Abstract InAs quantum dots with InGaAs strain-reducing layer on GaAs(001) grown at three different temperatures were investigated from the aspect of both structural and optical properties. Dislocations originated from the InAs quantum dot (QD) layer were observed at growth temperatures of 490 °C, 500 °C, and 510 °C. Their densities are relatively larger in the cases of 490 °C and 510 °C, where they are caused by strain accumulation at larger-size InAs quantum dots during cover layer growth. Photoluminescence lifetimes at 6 K are almost the same in the three samples. On the other hand, that of the 500 °C-grown sample is an order of magnitude larger than the other two samples at 300 K. This indicates that dislocations act as a non-radiative center to deteriorate optical characteristics. Growth around 500 °C suppresses the growth of larger-size InAs QDs and reduces the InAs strain accumulation, which leads to the dislocation formation at the cover layer.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3