Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2173188
Reference22 articles.
1. GaAs-based long-wavelength lasers
2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
3. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
4. Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures
5. Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures
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