Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

Published:2002-09-09 Issue:11 Volume:81 Page:2103-2105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Monier C.,Baca A. G.,Sun S. Z.,Armour E.,Newman F.,Hou H. Q.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1506406

Reference16 articles.

1. High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base

2. High-speed InGaP/GaAs HBTs using a simple collector undercut technique to reduce base-collector capacitance

3. Submicron AlInAs/InGaAs HBT with 160 GHz f/sub T/ at 1 mA collector current

4. A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

5. DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs

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