1. Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
2. Wideband DHBTs using a graded carbon-doped InGaAs base
3. J. Godin, M. Riet, A. Konczykowska, P. Berdaguer, M. Kahn, P. Bove, H. Lahreche, R. Langer, M. Lijadi, F. Pardo, N. Bardou, J.L. Pelouard, C. Maneux, M. Belhaj, B. Grandchamp, N. Labat, A. Touboul, C. Bru-Chevallier, H. Chouaib, and T. Benyattou, in 13th European Gallium Arsenide and Other Semiconductor Application Symposium, EGAAS 2005 (IEEE, 2005), p. 133.
4. 40 Gbit∕s digital IC fabricated using InP∕GaAsSb∕InP DHBT technology