Interfacial recombination velocity determination in In0.5Ga0.05P/GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323773
Reference15 articles.
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4. Universal stain/etchant for interfaces in III‐V compounds
5. Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy
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1. Recombination model for heterostructure interfaces;Journal of Applied Physics;1993-11
2. Double-Heterostructure Indium-Tin Oxide/InGaAsP/AlGaAs Lasers;Crystal Research and Technology;1993
3. Influence of luminescence self‐absorption on photoluminescence decay in GaAs;Journal of Applied Physics;1989-12
4. OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications;Journal of Crystal Growth;1986-09
5. Luminescence decay and injected carrier lifetime in the high injection region of AlGaAs lasers;IEEE Journal of Quantum Electronics;1982-06
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