Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88871
Reference10 articles.
1. Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP/GaAs structures
2. Room‐temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μm
3. The preparation and properties of vapor-grown In1−xGax P
4. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
5. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
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1. Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy;Applied Physics Letters;2003-12
2. Electronic and Photonic Device Applications of In0.5Ga0.5P and In0.5Al0.5P Grown by Gas Source Molecular Beam Epitaxy;MRS Proceedings;1994
3. Epitaxial Growth, Fabrication, and Performance of Ingaas Strained Quantum Well Laser Structures;MRS Proceedings;1993
4. High temperature, high power InGaAs/GaAs quantum-well lasers with lattice-matched InGaP cladding layers;IEEE Photonics Technology Letters;1992-07
5. Basic Techniques for Fabricating Semiconductor Lasers;Physics of Semiconductor Lasers;1991
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