Room‐temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88244
Reference14 articles.
1. Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP/GaAs structures
2. Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs
3. The preparation and properties of vapor-grown In1−xGax P
4. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
5. Measurements of refractive index step and of carrier confinement at (AlGa)As–GaAs heterojunctions
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