Recombination model for heterostructure interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354193
Reference20 articles.
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4. Interfacial recombination velocity determination in In0.5Ga0.05P/GaAs
5. Low Interface Recombination Velocity in GaAs-(Al, Ga)As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence in Analysis of Surfaces and Interfaces;Encyclopedia of Analytical Chemistry;2006-09-15
2. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
3. Cl and EBIC analysis of a p+ -InGaAs/n-InGaAs/n-InP/n+ -InP heterostructure;Materials Science and Engineering: B;1996-12
4. Non-radiative electron-hole pair recombination in degraded GaAs/GaAlAs double heterostructure;Semiconductor Science and Technology;1994-12-01
5. Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions;Journal of Applied Physics;1994-03
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