Double-Heterostructure Indium-Tin Oxide/InGaAsP/AlGaAs Lasers-Reference-Cited by-同舟云学术

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Double-Heterostructure Indium-Tin Oxide/InGaAsP/AlGaAs Lasers

Published:1993 Issue:5 Volume:28 Page:711-716
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Takahashi N. S.,Hunyu Y.,Shibano E.,Mochizuki N.,Kurita S.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference20 articles.

1. : Heterostructure Lasers, Part A, New York 1978, p. 181

2. Interfacial recombination at (AlGa)As/GaAs heterojunction structures

3. Interfacial recombination velocity determination in In0.5Ga0.05P/GaAs

4. Bistable operation of 0.8μm GaInAsP/AaAs lasers

5. New double‐heterostructure indium‐tin oxide/InGaAsP/AlGaAs surface light‐emitting diodes at 650‐nm range

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prism-like folded cavity surface-emitting laser diode: Electromagnetic-threshold analysis;IEE Proceedings - Optoelectronics;1998-06-01

2. Non-metalin situandex situohmic contacts to n-ZnSe;Semiconductor Science and Technology;1997-04-01

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