Influence of luminescence self‐absorption on photoluminescence decay in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343658
Reference27 articles.
1. Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy
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4. Simultaneous measurement of recombination lifetime and surface recombination velocity
5. Surface recombination velocity and bulk lifetime in GaAs and InP
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