Theoretical study on the influence of photon reabsorption on spatially resolved photocarrier radiometric imaging of silicon wafers
Author:
Affiliation:
1. School of Optoelectronic Engineering, Xi'an Technological University, Xi'an 710032, China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4993968
Reference28 articles.
1. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
2. Carrier-density-wave transport and local internal electric field measurements in biased metal-oxide-semiconductor n-Si devices using contactless laser photo-carrier radiometry
3. Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry
4. Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry;AIP Advances;2020-03-01
2. Theoretical study on influence of photon reabsorption on photocarrier radiometric characteristics of silicon wafers;Acta Physica Sinica;2019
3. Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption;Acta Physica Sinica;2018
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