Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1765737
Reference19 articles.
1. Ion Implantation in Silicon—Physics, Processing, and Microelectronic Devices
2. The history of uniformity mapping in ion implantation
3. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
4. Laser infrared photothermal radiometry of semiconductors: principles and applications to solid state electronics
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3. Differential nonlinear photocarrier radiometry for the characterization of ultra-low energy boron implantation in Silicon;Chinese Physics B;2021-08-19
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