Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662266
Reference13 articles.
1. Luminescence due to Ge Acceptors in GaAs
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4. Optical microprobe response of GaAs diodes
5. uv Microprobe Technique for Measurement of Minority‐Carrier Diffusion Length in GaP p‐n Junction Material
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