Zur Messung der Diffusionslänge der Minoritätsträger in Halbleitern-Reference-Cited by-同舟云学术

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Zur Messung der Diffusionslänge der Minoritätsträger in Halbleitern

Published:1964 Issue:1 Volume:5 Page:169-174
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Jungk G.,Menniger H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. und , Phys. stat. sol., Veröffentlichung demnächst.

2. Photoconductivity Conference, Wiley, New York 1956 (S. 215).

3. Phys. stat. sol., Veröffentlichung demnächst.

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1. Scanning optical microscopy;Advances in Imaging and Electron Physics;2020

2. Numerical evaluation of the scanning method for the determination of minority carrier diffusion length in p-n junctions;Solid-State Electronics;1987-10

3. SEM-EBIC and traveling light spot diffusion length measurements: Normally irradiated charge-collecting diode;IEEE Transactions on Electron Devices;1983-06

4. Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam;Japanese Journal of Applied Physics;1982-04-20

5. Laser light spot mapping of depletion in power semiconductor devices;Physica Status Solidi (a);1979-05-16

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