Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663321
Reference32 articles.
1. Photon-Radiative Recombination of Electrons and Holes in Germanium
2. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
3. Infrared Transmission and Fluorescence of Doped Gallium Arsenide
4. Optical Properties of n‐Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements
5. EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
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