Auger electron spectroscopy studies of nitridation of the GaAs(001) surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368513
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1. GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
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5. Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures
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1. Electron impact induced collective and atomic-like single-electron Ga3d→εl excitations in GaAsN alloy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-07
2. Formation of GaAs1−xNx nanofilm on GaAs by low energy N2+ implantation;Applied Surface Science;2011-03
3. Chemical effect of inert argon beam on nitride nanolayer formed by ion implantation into GaAs surface;Technical Physics Letters;2010-12
4. Optical properties of amorphous GaAs1−xNx film sputtering with different N2 partial pressures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-09
5. Effects of low-energy ion beam glancing angle nitridation on nGaAs surface and Co–nGaAs Schottky contact properties;Vacuum;2004-12
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