Electron impact induced collective and atomic-like single-electron Ga3d→εl excitations in GaAsN alloy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electron impact induced collective and atomic-like single-electron Ga3d→εl excitations in GaAsN alloy

Published:2015-07 Issue: Volume:354 Page:100-104
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mikoushkin V.M.

Funder

Russian Academy of Sciences

Russian–German Laboratory

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

2. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

4. Indium Nitride and Related Alloys;Veal,2009

5. Bowing parameter of the band-gap energy of GaNxAs1−x

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unoccupied Atomic-Like States of GaAs;JETP Letters;2020-12

2. Elemental arsenic in the natural oxide on the MBE GaAs surface;Applied Surface Science;2020-02

3. Defect Structure of GaAs Layers Implanted with Nitrogen Ions;Technical Physics Letters;2018-09

4. The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers;Technical Physics Letters;2018-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP