Formation of GaAs1−xNx nanofilm on GaAs by low energy N2+ implantation
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference25 articles.
1. Reactive N+2 ion bombardment of GaAs{110}: A method for GaN thin film growth
2. Nitridation of GaAs(110) using energetic N+ and N+2 ion beams
3. Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs
4. Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces
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1. P-n nanostructure formation effect of low-energy N2+ ions on n-GaAs surface;Applied Surface Science;2022-03
2. Photovoltaic effect on the n-GaAs surface irradiated with low-energy Ar+ ions;Journal of Materials Science;2021-07-04
3. Elemental arsenic in the natural oxide on the MBE GaAs surface;Applied Surface Science;2020-02
4. Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film;Semiconductors;2019-04
5. In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy $${\text{N}}_{2}^{ + }$$ Ion Implantation;Semiconductors;2018-12
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