Effects of low-energy ion beam glancing angle nitridation on nGaAs surface and Co–nGaAs Schottky contact properties
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference34 articles.
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1. P-n nanostructure formation effect of low-energy N2+ ions on n-GaAs surface;Applied Surface Science;2022-03
2. In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy $${\text{N}}_{2}^{ + }$$ Ion Implantation;Semiconductors;2018-12
3. Determination of the some electronic parameters of nanostructure copper selenide and Cu/Cu3Se2/n-GaAs/In structure;Journal of Alloys and Compounds;2015-04
4. Formation of GaAsN/GaN cluster nanostructures on the surface of GaAs by the implantation of low-energy nitrogen ions;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-11
5. Formation and transformation of embedded GaN nanocrystals;Applied Physics Letters;2012-05-14
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