In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4886768
Reference30 articles.
1. Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films
2. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
3. Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
4. Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
5. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
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