Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4827201
Reference13 articles.
1. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
2. Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors
3. Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface
4. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
5. Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
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