Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819402
Reference33 articles.
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4. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
5. GaN-Based RF Power Devices and Amplifiers
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