In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

Published:2021-08-28 Issue:11 Volume:7 Page:2100333
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Roy Saurav¹^ORCID,Chmielewski Adrian E.²,Bhattacharyya Arkka¹^ORCID,Ranga Praneeth¹^ORCID,Sun Rujun¹,Scarpulla Michael A.¹,Alem Nasim²^ORCID,Krishnamoorthy Sriram¹³

Affiliation:

1. Department of Electrical and Computer Engineering University of Utah Salt Lake City UT 84112 USA

2. Department of Materials Science and Engineering Pennsylvania State University University Park PA 16802 USA

3. Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA

Funder

Air Force Office of Scientific Research

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100333

Reference39 articles.

1. A review of Ga2O3materials, processing, and devices

2. Interface State Density in Atomic Layer Deposited SiO2/ $\beta $ -Ga2O3( $\bar {2}01$ ) MOSCAPs

3. Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3interface on different crystal orientations

4. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

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