92–96 GHz GaN power amplifiers-Reference-Cited by-同舟云学术

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92–96 GHz GaN power amplifiers

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE/MTT-S International Microwave Symposium Digest
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Author:

Micovic M.,Kurdoghlian A.,Margomenos A.,Brown D. F.,Shinohara K.,Burnham S.,Milosavljevic I.,Bowen R.,Williams A.J.,Hashimoto P.,Grabar R.,Butler C.,Schmitz A.,Willadsen P. J.,Chow D. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6248408/6257755/06259572.pdf?arnumber=6259572

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distance-Enhanced Hybrid Hierarchical Modulation and QAM Modulation Schemes for UAV Terahertz Communications;Drones;2024-07-06

2. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

3. Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-02

4. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01

5. $W$-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications;IEEE Transactions on Microwave Theory and Techniques;2024

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