Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
Author:
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793483
Reference30 articles.
1. Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET
2. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
3. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics
4. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
5. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
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