Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3224852
Reference6 articles.
1. M. K. Das, “Fundamental studies of the silicon carbide MOS structure,” Ph.D. thesis, Purdue University, 2001.
2. Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures
3. DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures
4. Band offset measurements of the Si3N4/GaN (0001) interface
5. Extension of the C-V doping profile technique to study the movements of alloyed junction and substrate out-diffusion, the separation of junctions, and device area trimming
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