Band offset measurements of the Si3N4/GaN (0001) interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1601314
Reference23 articles.
1. Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole
2. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
3. Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition
4. The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation
5. Pd growth and subsequent Schottky barrier formation on chemical vapor cleanedp-type GaN surfaces
Cited by 82 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoinduced charge-carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions;Physical Review A;2024-04-04
2. Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiN x as Gate Dielectric and Surface Passivation;physica status solidi (a);2022-11-17
3. Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics;Optical and Quantum Electronics;2022-10-22
4. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices;Materials;2022-01-22
5. An InGaN/SiN x /Si Uniband Diode Photodetector;Advanced Photonics Research;2022-01-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3