Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices-Reference-Cited by-同舟云学术

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Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices

Published:2023-07 Issue:7 Volume:70 Page:3442-3446
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shvilberg Liron¹^ORCID,Mimura Takanori¹,Xue Haotian²^ORCID,Wierer Jonathan J.²^ORCID,Paisley Elizabeth A.³,Heinrich Helge¹,Ihlefeld Jon F.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA

2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA

3. Sandia National Laboratories, Albuquerque, NM, USA

Funder

Defense Advanced Research Projects Agency (DARPA) through a DARPA Young Faculty Award via the U

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10159202/10130345.pdf?arnumber=10130345

Reference32 articles.

1. Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux

2. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy

3. Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition

4. Surfactant assisted growth of MgO films on GaN

5. SiO₂/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

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