Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN-Reference-Cited by-同舟云学术

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Published:2019-10-21 Issue:17 Volume:115 Page:172104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sayed Islam¹^ORCID,Bonef Bastien²^ORCID,Liu Wenjian¹^ORCID,Chan Silvia²^ORCID,Georgieva Jana¹,Speck James S.²,Keller Stacia¹,Mishra Umesh K.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

National Science Foundation

Office of Naval Research

Simons Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5125788

Reference24 articles.

1. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices

2. Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

3. Characterization of Si-added aluminum oxide (AlSiO) films for power devices

4. Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane

5. S. Chan , “ First developments of AlSiO gate dielectrics by MOCVD: A pathway to efficient GaN electronics,” Ph.D. dissertation ( UC Santa Barbara, 2018).

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity;Proceedings of the National Academy of Sciences;2023-10-24

2. Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization;European Journal of Engineering and Technology Research;2023-03-21

3. Controlled autocrystallization in magnetron co-sputtered Si–Al films;Vacuum;2022-09

4. Electrical properties and energy band alignment of SiO₂/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001¯) substrates;Applied Physics Letters;2022-08-08

5. Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing;Semiconductor Science and Technology;2021-07-28