Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1772884
Reference29 articles.
1. Fabrication and performance of GaN electronic devices
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
4. Low temperature semiconductor surface passivation for nanoelectronic device applications
5. Low interface trap density for remote plasma deposited SiO2 on n‐type GaN
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