Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors-Reference-Cited by-同舟云学术

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Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Published:2003 Issue:4 Volume:21 Page:1828
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hashizume Tamotsu,Ootomo Shinya,Inagaki Takanori,Hasegawa Hideki

Publisher

American Vacuum Society

Subject

General Engineering

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