Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy

Published:2023-12 Issue: Volume:640 Page:158313
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mansurov Vladimir^ORCID,Malin Timur,Golyashov Vladimir^ORCID,Milakhin Denis^ORCID,Zhuravlev Konstantin^ORCID

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference80 articles.

1. AlGaN/GaN HEMTs — an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. A review on the GaN-on-Si power electronic devices;Zhong;Fundam. Res.,2022

3. GaN-based power devices: physics, reliability, and perspectives;Meneghini;J. Appl. Phys.,2021

4. High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation;Harrouche;IEEE J. Electron Dev. Soc.,2019

5. Gate-recessed AlGaN–GaN HEMTs for high-performance millimeter-wave applications;Moon;IEEE Electron Dev. Lett.,2005

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

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