Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices
Author:
Funder
Office of Naval Research
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab9ecb/pdf
Reference30 articles.
1. Insulated gate and surface passivation structures for GaN-based power transistors
2. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
3. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
4. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
5. Reliability Evaluation of Al2O3Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN
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1. Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices;Solid-State Electronics;2023-11
2. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24
3. Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001¯) substrates;Applied Physics Letters;2022-08-08
4. Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices;Crystals;2022-05-28
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