Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Recent Advances in GaN-Based Power HEMT Devices;He;Adv Electron Mater,2021
2. Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture;Le Royer,2022
3. Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator;Fiorenza;IEEE Trans Electron Devices,2017
4. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors;Wu;Appl Phys Lett,2015
5. Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition;Hori;Jpn J Appl Phys,2010