Impact of tandem IGZO/ZnON TFT with energy-band aligned structure
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul 04763, South Korea
2. R&D Center, Samsung Display, Yongin 17113, South Korea
Funder
Institute for Information and Communications Technology Promotion
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0023837
Reference22 articles.
1. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
2. Comparative Studies of Long-Term Ambiance and Electrical Stress Stability of IGZO Thin-Film Transistors Annealed Under Hydrogen and Nitrogen Ambiance
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
5. Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
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