Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application-Reference-Cited by-同舟云学术

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Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

Published:2014-05-13 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lee Eunha,Benayad Anass,Shin Taeho,Lee HyungIk,Ko Dong-Su,Kim Tae Sang,Son Kyoung Seok,Ryu Myungkwan,Jeon Sanghun,Park Gyeong-Su

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep04948.pdf

Reference26 articles.

1. Dehuff, N. L. et al. Transparent thin-film transistors with zinc indium oxide channel layer. J. Appl. Phys. 97, 064505 (2005).

2. Hu, L. et al. An Optimized Ultraviolet-A Light Photodetector with Wide-Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt. Advanced Materials 24, 2305 (2012).

3. Xu, C., Wu, J., Desai, U. V. & Gao, D. High-efficiency solid-state dye-sensitized solar cells based on TiO2-coated ZnO nanowire arrays. Nano Letters 12, 2420 (2012).

4. Hsieh, H. H. & Wu, C. C. Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes. Appl. Phys. Lett. 91, 013502 (2007).

5. Bera, A. & Basak, D. Role of defects in the anomalous photoconductivity in ZnO nanowires. Appl. Phys. Lett. 94, 163119 (2009).

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