Metal-Rich Zn-Sn-O-N Channel-Based Thin Film Transistor Photodetectors-Reference-Cited by-同舟云学术

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Metal-Rich Zn-Sn-O-N Channel-Based Thin Film Transistor Photodetectors

Published:2024-07 Issue:7 Volume:71 Page:4166-4172
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ren JunYan¹,Liu XiaoHan²,Li Ting²,Qian YuJia²,Hu PeiXuan²,Chen HongYu²,Lei MingHang²,Liang LingYan²^ORCID,Cao HongTao¹^ORCID

Affiliation:

1. Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo, China

2. College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences (UCAS), Beijing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Natural Science Foundation of Ningbo Municipality

Ningbo Key Scientific and Technological Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10566499/10551712.pdf?arnumber=10551712

Reference50 articles.

1. Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

2. Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials

3. Heterojunction oxide thin film transistors: a review of recent advances

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Insights into the device structure, processing and material design for an organic thin-film transistor towards functional circuit integration

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