Heterojunction oxide thin film transistors: a review of recent advances
Author:
Affiliation:
1. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
Abstract
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00584D
Reference116 articles.
1. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
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5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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