Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition-Reference-Cited by-同舟云学术

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Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition

Published:2024-08 Issue: Volume:664 Page:160242
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Yoon-Seo,Hong Hyunmin,Hong TaeHyun,Choi Su-Hwan,Chung Kwun-Bum^ORCID,Park Jin-Seong^ORCID

Funder

Korea Ministry of Trade Industry and Energy

Publisher

Elsevier BV

Reference38 articles.

1. The era of hyper-scaling in electronics;Salahuddin;Nat. Electron.,2018

2. Material characteristics and applications of transparent amorphous oxide semiconductors;Kamiya;NPG Asia Mater.,2010

3. Overview of electroceramic materials for oxide semiconductor thin film transistors;Park;J. Electroceramics.,2014

4. Development of IGZO-TFT and creation of new devices using IGZO-TFT;Kataoka;Dig. Tech. Pap. - SID Int. Symp.,2013

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

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