Quantitative Insight of Annealing Atmosphere-Induced Device Performance and Bias Stability in a Ga-Doped InZnSnO Thin-Film Transistors
Author:
Affiliation:
1. Department of Physics, Dongguk University, Seoul, South Korea
2. Division of AI Semiconductor, Yonsei University, Seoul, Gangwon-do, South Korea
Funder
Samsung Research Funding and Incubation Center of Samsung Electronics
Technology Innovation Program (or Industrial Strategic Technology Development Program) through the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/16/10645717/10601619.pdf?arnumber=10601619
Reference41 articles.
1. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. The Nature of the Oxygen Vacancy in Amorphous Oxide Semiconductors: Shallow Versus Deep
4. Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
5. A New Pixel Circuit With Selectively Synchronized Dual-Gated IGZTO TFTs for AMOLED Displays
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